Samsung has officially started the mass production of the Advanced 14nm EUV DDR5 DRAM under their five-layer EUV processor to further enhance the overall productivity by 20%.
Amidst all the advancements and production news from Samsung, the leading manufacturer in advanced memory technology has finally announced that they have started the production of the Advanced 14nm EUV DDR5 DRAM, based off of the Extreme Ultraviolet technology.
Besides being the first brand to manufacture the world’s first EUV DRAM in March last year, the production and functions have further progressed in the upcoming DRAM variants. The upcoming models are integrated with more EUV layers to offer the most advanced DRAM processing for the DDR5 solutions.
Jooyoung Lee, Senior Vice President and Head of DRAM Product & Technology at Samsung Electronics addressed the upcoming development saying that Samsung has been a leading name in the DRAM market for the past three decades, offering key pattern innovations and this one is not going to be any different.
The introduction of the multi-layer EUV is set to introduce a host of miniaturization at 14nm which is not a possibility with the conventional argon fluoride process. The future of memory solutions for the devices is going to be built surrounding those advancements to offer the users with integrated and improved performance and capacity in the current data-drive 5G world.
The integration of the EUV technology in the memory solutions is becoming increasingly important for higher performance with varying patterning accuracy and greater yields from the processes.
The upcoming DDR4 DRAM from Samsung is integrated with five layers EUV technology, enabling the brand to achieve the highest density, one that hasn’t been done yet in by the other brands. This new design and development in the memory solutions is set to improve the overall wafer productivity by 20%. The 14nm process will also reduce the power consumption by 20% compared to the previous versions.
Further reports suggest that the new Samsung 14nm DRAM will offer the consumers with up to 7.2 gbps speed, which is almost double that the previous DDR4 speed in the DRAM configurations.
The introduction of this 14nm DDR5 portfolio from Samsung is expected to support data center, supercomputer along with enterprise server applications. Also, Samsung has reported that they want to further elaborate the DRAM chip density to 24 Gb to meet the growing demands of the professionals in the IT industry.
Source: Samsung
